Callaghan Innovation Research Papers

Back to Research Papers

TitleTunneling rates of electron pumping in the R-SINIS transistor
Publication TypeJournal Article
Year of Publication2014
AuthorsBubanja, V.
JournalJournal of Low Temperature Physics
Pagination564 - 579
Date Published2014
ISSN00222291 (ISSN)
KeywordsAnalytic expressions, Andreev reflection, Co-tunneling, Coulomb blockade, Electromagnetic environments, Electromagnetic fluctuations, Electromagnetism, Electron tunneling, Metrological applications, Single Electron Tunneling, Superconducting electrodes
AbstractWe consider the influence of the electromagnetic fluctuations on the transport properties of a hybrid single electron transistor, consisting of superconducting electrodes and a normal-metal island, when operated as a turnstile. We derive the analytic expressions for the rates near the thresholds of single electron tunneling, Andreev reflection, and Cooper-pair-electron cotunneling processes. These results show that the dissipative on-chip impedance suppresses the rates of the undesirable higher-order tunneling processes much stronger than the single electron tunneling which can therefore be utilized to increase the accuracy of such a device in quantum metrological applications. © 2014 Springer Science+Business Media New York.

Back to top