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TitleTunneling rates of electron pumping in the R-SINIS transistor
Publication TypeJournal Article
Year of Publication2014
AuthorsBubanja, V.
JournalJournal of Low Temperature Physics
Volume175
Issue3-4
Pagination564 - 579
Date Published2014
ISSN00222291 (ISSN)
KeywordsAnalytic expressions, Andreev reflection, Co-tunneling, Coulomb blockade, Electromagnetic environments, Electromagnetic fluctuations, Electromagnetism, Electron tunneling, Metrological applications, Single Electron Tunneling, Superconducting electrodes
AbstractWe consider the influence of the electromagnetic fluctuations on the transport properties of a hybrid single electron transistor, consisting of superconducting electrodes and a normal-metal island, when operated as a turnstile. We derive the analytic expressions for the rates near the thresholds of single electron tunneling, Andreev reflection, and Cooper-pair-electron cotunneling processes. These results show that the dissipative on-chip impedance suppresses the rates of the undesirable higher-order tunneling processes much stronger than the single electron tunneling which can therefore be utilized to increase the accuracy of such a device in quantum metrological applications. © 2014 Springer Science+Business Media New York.
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84900638935&partnerID=40&md5=2beadf9bbb7724557bc7540cd8fc9faa
DOI10.1007/s10909-013-1080-6

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