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TitleThermoluminescence spectra of doped Bi4Ge3O12
Publication TypeJournal Article
Year of Publication1994
AuthorsRaymond, S.G., Luff B.J., Townsend P.D., Feng X., and Hu G.
JournalRadiation Measurements
Pagination195 - 202
Date Published1994
ISSN13504487 (ISSN)
KeywordsBismuth compounds, Bismuth germanate, Charge transfer, Defects, Doping (additives), Dosimetry, Emission spectroscopy, Impurities, Ions, Oxygen, Radiation effects, Rare earth elements, Recombination centers, Thermal effects, Thermoluminescence, Trapping levels
AbstractThermoluminescence of Bi4Ge3O12 reveals a range of trapping levels which are common to pure and doped material. The relative intensities of the glow peaks observed above room temperature change with radiation dose and dose rate and the presence of impurities. Although the trapping sites are thought to be intrinsic oxygen defects, additions of impurities enhance the signals from different glow peaks. The emission spectra from pure and transition ion doped Bi4Ge3O12 extend from 450 to 750 nm. If rare earth ions are present then they act as the dominant recombination centres and define the emission spectra. This is interpreted as resulting from direct charge transfer from intrinsic defect traps to rare earth recombination centres. The close interaction of trap and rare earth is evident by a temperature dependence of the 110 and 175°C glow peaks with the ionic radii of the impurities. Models for the charge traps are proposed and activation energies are given. © 1994.

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