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TitleSingle electron memory at room temperature: Experiment and simulation
Publication TypeJournal Article
Year of Publication2001
AuthorsBubanja, V., Matsumoto K., and Gotoh Y.
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue1
Pagination87 - 91
Date Published2001
ISSN00214922 (ISSN)
Keywordscomputer simulation, Data storage equipment, Electric network analysis, Electron devices, Electron traps, Electron tunneling, Logic circuits, Monte Carlo methods, Single electron memory, Tunnel junctions
AbstractWe study a single-electron room temperature memory device. The device was fabricated by a pulse mode atomic force microscopy nano-oxidation process on an atomically flat α-A12O3 substrate. We model the operation using a Monte Carlo simulation. There is a general agreement between theory and experiment. The observed differences stem from noise and the uncertainty in determining the geometry of the fabricated circuit.
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0035060635&partnerID=40&md5=5fd4760bddb6e7797fc8e767c7d1ca20

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