| Title | Semiconducting ground state of GdN thin films |
| Publication Type | Journal Article |
| Year of Publication | 2006 |
| Authors | Granville, S., Ruck B.J., Budde F., Koo A., Pringle D.J., Kuchler F., Preston A.R.H., Housden D.H., Lund N., Bittar A., Williams G.V.M., and Trodahl H.J. |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 73 |
| Issue | 23 |
| Date Published | 2006 |
| ISSN | 10980121 (ISSN) |
| Abstract | We report the growth of GdN thin films and a study of their structure and magnetic and conducting properties. It is demonstrated that they are semiconducting at ambient temperature with nitrogen vacancies the dominant dopant. The films are ferromagnetic below 68 K, and a significant narrowing of the band gap is signaled by more than a doubling of its conductivity. The conductivity in the low-temperature ferromagnetic state remains typical of a doped semiconductor, supporting the view that this material is semiconducting in its ground state and that no metal-insulator transition occurs at the Curie temperature. © 2006 The American Physical Society. |
| URL | http://www.scopus.com/inward/record.url?eid=2-s2.0-33745204439&partnerID=40&md5=1d1c6b2bc3b0d8556d6eb1c3b238e68c |
| DOI | 10.1103/PhysRevB.73.235335 |
