| Title | Quantitative study of molecular N2 trapped in disordered GaN:O films |
| Publication Type | Journal Article |
| Year of Publication | 2004 |
| Authors | Ruck, B.J., Koo A., Lanke U.D., Budde F., Granville S., Trodahl H.J., Bittar A., Metson J.B., Kennedy V.J., and Markwitz A. |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 70 |
| Issue | 23 |
| Pagination | 1 - 5 |
| Date Published | 2004 |
| ISSN | 10980121 (ISSN) |
| Keywords | Absorption spectroscopy, anion, article, cation, film, Gallium, molecular interaction, nitrogen, quantitative analysis, Raman spectrometry, roentgen spectroscopy |
| Abstract | The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21% of the nitrogen in the films is in the form of molecular N2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N2 fraction, the level of oxygen impurities, and the absence of crystalline order in the GaN:O matrix. |
| URL | http://www.scopus.com/inward/record.url?eid=2-s2.0-13944277991&partnerID=40&md5=957250818142a8ecb1ba0a862b9957f6 |
| DOI | 10.1103/PhysRevB.70.235202 |
