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TitleQuantitative study of molecular N2 trapped in disordered GaN:O films
Publication TypeJournal Article
Year of Publication2004
AuthorsRuck, B.J., Koo A., Lanke U.D., Budde F., Granville S., Trodahl H.J., Bittar A., Metson J.B., Kennedy V.J., and Markwitz A.
JournalPhysical Review B - Condensed Matter and Materials Physics
Pagination1 - 5
Date Published2004
ISSN10980121 (ISSN)
KeywordsAbsorption spectroscopy, anion, article, cation, film, Gallium, molecular interaction, nitrogen, quantitative analysis, Raman spectrometry, roentgen spectroscopy
AbstractThe structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21% of the nitrogen in the films is in the form of molecular N2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N2 fraction, the level of oxygen impurities, and the absence of crystalline order in the GaN:O matrix.

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