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TitlePhotocurrent diffusion length in disordered GaN
Publication TypeJournal Article
Year of Publication2007
AuthorsKoo, A., Budde F., Ruck B.J., Trodahl H.J., Bittar A., and Preston A.R.H.
JournalJournal of Materials Science: Materials in Electronics
IssueSUPPL. 1
Pagination107 - 110
Date Published2007
ISSN09574522 (ISSN)
KeywordsCarrier concentration, computer simulation, Diffusion, Electric contacts, Nanocrystalline gallium nittride, Nanocrystalline materials, Photocurrent diffusion length, Photocurrents, Semiconducting gallium compounds, Semiconductor devices
AbstractThe diffusion length of carriers in semiconductors is a significant parameter determining the suitability of a material for device applications. Here we describe a simple new technique to measure diffusion length and apply it to a study of two types of disordered GaN. We find the diffusion length to be of the order of microns in nanocrystalline GaN and hundreds of microns in amorphous GaON. Experimentally the method involves the defocussing of a laser spot between two contacts. The results are supported by numerical modelling of the carrier concentrations in the experiment. © Springer Science+Business Media, LLC 2007.

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