| Title | Photoconductivity in nanocrystalline GaN and amorphous GaON |
| Publication Type | Journal Article |
| Year of Publication | 2006 |
| Authors | Koo, A., Budde F., Ruck B.J., Trodahl H.J., Bittar A., Preston A., and Zeinert A. |
| Journal | Journal of Applied Physics |
| Volume | 99 |
| Issue | 3 |
| Date Published | 2006 |
| ISSN | 00218979 (ISSN) |
| Keywords | Absorption, Amorphous GaON (a-GaON), Data acquisition, Fermi level, Gallium nitride, Ion-assisted deposition, MATHEMATICAL MODELS, Nanocrystalline GaN (nc-GaN), Nanostructured materials, Optoelectronic devices, Photoconducting devices |
| Abstract | In this work we present a study of the optoelectronic properties of nanocrystalline GaN (nc-GaN) and amorphous GaON (a-GaON) grown by ion-assisted deposition. The two classes of film show very distinct photoconductive responses; the nc-GaN has a fast small response while the a-GaON films have a much larger response which is persistent. To describe the observed intensity, wavelength, and temperature dependence of the photoconductivity in each class of film, we build a model which takes into account the role of a large density of localized states in the gap. The photoconductivity measurements are supplemented by thermally stimulated conductivity, measurement of the absorption coefficient, and determination of the Fermi level. Using the model to aid our interpretation of this data set, we are able to characterize the density of states in the gap for the two materials. © 2006 American Institute of Physics. |
| URL | http://www.scopus.com/inward/record.url?eid=2-s2.0-33645517281&partnerID=40&md5=5ef23d622989d9bb74162fe39c07095c |
| DOI | 10.1063/1.2170400 |
