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TitleOptical response of DyN
Publication TypeJournal Article
Year of Publication2013
AuthorsAzeem, M., Ruck B.J., B. Le Do, Warring H., Trodahl H.J., Strickland N.M., Koo A., Goian V., and Kamba S.
JournalJournal of Applied Physics
Volume113
Issue20
Date Published2013
ISSN00218979 (ISSN)
KeywordsComplex refractive index, Dielectric strengths, Far infrared reflectivity, Free carrier absorption, Frequency-dependent, Moss-Burstein effect, Optical energy gap, Physical properties, Physics, Refractive index, Resistivity measurement
AbstractWe report measurements of the optical response of polycrystalline DyN thin films. The frequency-dependent complex refractive index in the near IR-visible-near UV was determined by fitting reflection/transmission spectra. In conjunction with resistivity measurements, these identify DyN as a semiconductor with an optical energy gap of 1.2 eV. When doped with nitrogen vacancies it shows free carrier absorption and a blue-shifted gap associated with the Moss-Burstein effect. The refractive index of 2.0 ± 0.1 depends only weakly on energy. Far infrared reflectivity data show a polar phonon of frequency 280 cm-1 and a dielectric strength of Δ ε = 20. © 2013 AIP Publishing LLC.
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84879112147&partnerID=40&md5=ae161b88a7177a5617ea3a1c575be967
DOI10.1063/1.4807647

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