Title | Optical response of DyN |
Publication Type | Journal Article |
Year of Publication | 2013 |
Authors | Azeem, M., Ruck B.J., B. Le Do, Warring H., Trodahl H.J., Strickland N.M., Koo A., Goian V., and Kamba S. |
Journal | Journal of Applied Physics |
Volume | 113 |
Issue | 20 |
Date Published | 2013 |
ISSN | 00218979 (ISSN) |
Keywords | Complex refractive index, Dielectric strengths, Far infrared reflectivity, Free carrier absorption, Frequency-dependent, Moss-Burstein effect, Optical energy gap, Physical properties, Physics, Refractive index, Resistivity measurement |
Abstract | We report measurements of the optical response of polycrystalline DyN thin films. The frequency-dependent complex refractive index in the near IR-visible-near UV was determined by fitting reflection/transmission spectra. In conjunction with resistivity measurements, these identify DyN as a semiconductor with an optical energy gap of 1.2 eV. When doped with nitrogen vacancies it shows free carrier absorption and a blue-shifted gap associated with the Moss-Burstein effect. The refractive index of 2.0 ± 0.1 depends only weakly on energy. Far infrared reflectivity data show a polar phonon of frequency 280 cm-1 and a dielectric strength of Δ ε = 20. © 2013 AIP Publishing LLC. |
URL | http://www.scopus.com/inward/record.url?eid=2-s2.0-84879112147&partnerID=40&md5=ae161b88a7177a5617ea3a1c575be967 |
DOI | 10.1063/1.4807647 |