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TitleLarge magnetoresistance in a permalloy/Ba2FeMoO6 sputtered film
Publication TypeJournal Article
Year of Publication2014
AuthorsMcCann, D.M., Williams G.V.M., Hyndman A., Stephen J., and Kennedy J.
JournalPhysica B: Condensed Matter
Pagination126 - 129
Date Published2014
ISSN09214526 (ISSN)
KeywordsBi-layer, Bi-layer films, High field, High-temperature synthesis, Interfaces (materials), Magnetoresistance, Nickel alloys, Permalloy, Room temperature, Sensors, Spin-polarized, Sputtered films, Tunnelling magnetoresistance
AbstractWe observed a large magnetoresistance (MR) in a permalloy/Ba 2FeMoO6 bi-layer film when compared with a Ba 2FeMoO6 film made by room temperature sputtering and high temperature synthesis where the MR reached ~-17% at 10 K and ~-8% at 300 K and 8 T. Our results are consistent with the MR in the bi-layer film being dominated by spin-tunneling across the interface between the two layers. The bi-layer film has a nearly linear MR at 300 K and 330 K and at high fields that may prove useful for magnetic sensor devices. © 2013 Elsevier B.V.

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