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TitleIon microscope investigations of non-uniform surfaces of thin SiO2 films produced by high-temperature nitridation experiments
Publication TypeJournal Article
Year of Publication2001
AuthorsMarkwitz, A., Trompetter W.J., White G.V., and Brown I.W.M.
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume181
Issue1-4
Pagination354 - 359
Date Published2001
ISSN0168583X (ISSN)
KeywordsAnnealing, Backscattering, High temperature effects, High temperature nitridation, Ion microscopes, Patternmaking, Probes, Scanning electron microscopy, Semiconducting films, Silica, Silicon nitride, Surface structure, Surface topography, X ray analysis
AbstractElemental composition and surface changes of thin high-temperature nitrided SiO2 films were studied with ion microscopy using 0.92 and 1.4 MeV deuterium ions. Surprisingly, a non-uniform artificial pattern on the surface of samples annealed above 1150°C was observed. Nuclear reaction microprobe analysis and scanning electron microscopy were applied to reveal the origin and composition of the pattern. The surface topology and the maps of the light elements were studied. The backscattered signals in the NRA data provided maps of Si and variations in the elemental compositions at the surface of the specimens. With both techniques, significant differences in the elemental make-up within the pattern were obtained. The light elements were found to be enriched differently in the centre of the non-uniform patterns and the surrounding ring-like structures, suggesting the formation of compounds of C, N, O and Si. © 2001 Elsevier Science B.V. All rights reserved.
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0035387597&partnerID=40&md5=ee3eaba4e25dbb16caeb058783dd449e
DOI10.1016/S0168-583X(01)00369-X

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