Callaghan Innovation Research Papers

Back to Research Papers

TitleInfluence of the Native Oxide Layer on the Silicon Surface During Initial Stages of Nitridation
Publication TypeJournal Article
Year of Publication2001
AuthorsMarkwitz, A., White G.V., Trompetter W.J., and Brown I.W.M.
JournalMikrochimica Acta
Pagination49 - 56
Date Published2001
ISSN00263672 (ISSN)
Keywordsanalytic method, article, carbon, chemical reaction, elasticity, heavy ion, high temperature, nitridation, nitrogen, Oxygen, Sampling, Scanning electron microscopy, silicon dioxide, surface property, thickness
AbstractThin SiO2 layers were produced by thermal oxidation of Si wafer material. To study the effect of nitridation on the oxide layers, the specimens were nitrided in a furnace at high temperature. Non-destructive ion beam analysis was performed to determine changes in the elemental concentrations and depth profiles of the major components. In particular, N and O concentrations were measured using the non-resonant nuclear reactions 14N(d.α)12C and 16O(d,p)17O, respectively. To obtain depth profiles of the as-prepared and nitrided specimens, the samples were measured with RBS and heavy ion elastic recoil detection analysis. The ion beam analyses revealed an increase in thickness of the SiO2 layers with temperature. The specimens nitrided at 1200 °C were almost free of N. Surface topology investigations with scanning electron microscopy revealed concentric annular artificial patterns at the surfaces. In the centre of the pattern, only silicon was measured. Additionally, a band consisting of Si, O, and N surrounding the pattern was discovered. The findings are in agreement with specimens prepared at higher temperatures.

Back to top