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TitleFilled and empty states of disordered GaN studied by x-ray absorption and emission
Publication TypeJournal Article
Year of Publication2004
AuthorsRuck, B.J., Koo A., Lanke U.D., Budde F., Trodahl H.J., Williams G.V.M., Bittar A., Metson J.B., Nodwell E., Tiedje T., Zimina A., and Eisebitt S.
JournalJournal of Applied Physics
Volume96
Issue6
Pagination3571 - 3573
Date Published2004
ISSN00218979 (ISSN)
KeywordsAbsorption, Absorption spectroscopy, Amorphous structures, Band structure, Conduction bands, Electron energy levels, Electronic structure, fluorescence, Gallium nitride, Ion bombardment, Nanostructured materials, nitrogen, Oxygen, Rutherford backscattering spectroscopy, Valence bands, X-ray absorption spectroscopy
AbstractThe effects of short-ranged ordering on the electronic states of disordered GaN were investigated using x-ray absorption and emission spectroscopic techniques. Nanocrystalline samples with crystallites as small as 3 nm were found to exhibit an electronic structure resembling a broadened version of that in crystalline GaN. The oxygen containing films were found to show an additional peak in the density of states just above the conduction band edge. The results reveal the signature of molecular nitrogen trapped within the films in both the absorption and emission spectra.
URLhttp://www.scopus.com/inward/record.url?eid=2-s2.0-5044221270&partnerID=40&md5=70dabd3725429cea4f28491f1fc4b5d8
DOI10.1063/1.1782270

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