| Title | Effects of annealing on the structural and optical properties of zinc sulfide thin films deposited by ion beam sputtering |
| Publication Type | Journal Article |
| Year of Publication | 2014 |
| Authors | Kennedy, J., Murmu P.P., Gupta P.S., Carder D.A., Chong S.V., Leveneur J., and Rubanov S. |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 26 |
| Issue | 1 |
| Pagination | 561 - 566 |
| Date Published | 2014 |
| ISSN | 13698001 (ISSN) |
| Keywords | Energy gap, Ion beam sputtering deposition, Ion-beam sputtering, Optical properties, Opto-electronic materials, Optoelectronic devices, Point defects, RBS, Sputtering, Structural and optical properties, Thin films, Transmission electron microscopy, Ultraviolet visible spectroscopy, UV visible spectroscopy, X ray diffraction, Zinc, Zinc sulfide, Zinc sulfide thin films, ZnS |
| Abstract | We report the structural and optical properties of ZnS thin films fabricated by ion-beam sputtering. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results revealed a polycrystalline ZnS film with zinc blende phase as manifested by diffraction from the (111), (220) and (311) planes. Annealing resulted in the appearance of a metastable wurtzite phase with a concentration up to 26.6%. An energy bandgap, estimated from absorption spectra, was found to vary between 3.32 and 3.40 eV. The lower energy of this bandgap, as compared to bulk ZnS, is associated with the structural point defects along with mixed zinc blende and wurtzite phases of the polycrystalline ZnS films. Ion beam sputtering deposition can be used to tune the optical bandgap for potential applications in optoelectronic materials. © 2014 Elsevier Ltd. |
| URL | http://www.scopus.com/inward/record.url?eid=2-s2.0-84902176430&partnerID=40&md5=5b038a097abb29caa08d17982bf6ce9e |
| DOI | 10.1016/j.mssp.2014.05.055 |
