| Title | Effect of ion-energy on the properties of amorphous GaN films produced by ion-assisted deposition |
| Publication Type | Journal Article |
| Year of Publication | 2001 |
| Authors | Lanke, U., Koo A., Granville S., Trodahl J.O.E., Markwitz A., Kennedy J., and Bittar A. |
| Journal | Modern Physics Letters B |
| Volume | 15 |
| Issue | 28-29 |
| Pagination | 1355 - 1360 |
| Date Published | 2001 |
| ISSN | 02179849 (ISSN) |
| Keywords | conference paper, crystal structure, Crystallization, energy transfer, gallium nitrate, ion transport, radiation scattering, Raman spectrometry, technique |
| Abstract | Amorphous GaN films were deposited on various substrates viz. Si (100), quartz, glass, Al, stainless steel and glassy carbon by thermal evaporation of gallium in the presence of energetic nitrogen ions from a Kaufman source. The films were deposited at room temperature and 5 × 10-4 mbar nitrogen partial pressure. The effect of a low energy nitrogen ion beam during the synthesis of films was investigated for energies between 40 eV and 900 eV. The N:Ga atomic ratio, bonding state, microstructure, surface morphology, and electrical properties of the deposited a-GaN films were studied by different characterisation techniques. The films are found to be X-ray amorphous in nature, which is confirmed by Raman spectroscopy. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) indicate the N:Ga atomic ratio in the films. The 400-750 eV energy range is thought to be optimal for the production of single-phase amorphous GaN. The effect of ion-energy on optical, Raman, and electrical conductivity measurements of the films is also presented. |
| URL | http://www.scopus.com/inward/record.url?eid=2-s2.0-0035924046&partnerID=40&md5=e89652fdc5d57291ab575f29b81291bf |
| DOI | 10.1142/S0217984901003275 |
